About Us

MINEVIK Machinery is a leading and pioneering enterprise with the most advanced international level in R&D, manufacturing and selling of large-scale crushing & screening plants and beneficiation plants.

large-scale crushing & screening plants and beneficiation plants.

All of our equipment have got ISO international quality system certification, European Union CE certification and Russian GOST certification.

  • In central China-Zhengzhou, covering 140 thousand square meters
  • Win-win cooperation and create more value to customers
  • Exported large quantities and high-end mobile crushing plant and milling equipments to Russia, Kazakhstan, Indonesia, Ecuador, South Africa, Nigeria, Turkey more than 100 countries .

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Our Products

AS a leading global manufacturer of crushing and milling equipment, we offer including quarry, aggregate, grinding production and complete stone crushing plant. We also supply individual crushers and mills as well as spare parts of them.

Services

Our goal is to guarantee the excellent operation equipment with high safety for our customers and minimize the downtime of the machine by predictive maintenance. Kefid service and original accessories can be 100% trusted at the time of maintenance.

SERVICE AND SUPPORT

Minevik service and original accessories can be 100% trusted at the time of maintenance.

ACCESSORIES CENTER

striving to enable customers to get the parts in the nearest place.

SALES MARKET

Our sales market is spread all over more than 100 countries and regions

hafnium oxide doped

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Ferroelectricity in Doped Hafnium Oxide 1st Edition

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications

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Ferroelectricity in Doped Hafnium Oxide: Materials

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO 2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials.

More
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Hafnium dioxide Wikipedia

Hafnium(IV) oxide is the inorganic compound with the formula Hf O 2.Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium.It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium

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Endurance properties of silicon-doped hafnium oxide

Aug 01, 2018· The ferroelectricity in silicon-doped hafnium oxide (Si:HfO 2) and Hf 0.5 Zr 0.5 O 2 was first reported in 2011 [, , ]. Inspired by this unexpected behavior, HfO 2-based thin films have re-attracted great attention after long-term study and practical application of them as high-k dielectrics [4,5].

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Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

Aug 22, 2017· Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field‐effect transistor in the

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Doped Hafnium Oxide – An Enabler for Ferroelectric Field

Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors Article (PDF Available) in Advances in Science and Technology Volume 95:136-145 · November 2014 with 827 Reads

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Improvement of zirconium-doped hafnium oxide high-k

Apr 23, 2013· Dielectric properties of the Zr-doped hafnium oxide high-k thin film were improved with the addition of a small amount of molybdenum. The addition of molybdenum reduced the interface density of states and the oxide charge trapping density due to the removal of some oxygen vacancies and Hf dangling bonds in the film. It also decreased the leakage current and increased the breakdown voltage

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Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric

Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now.

More
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(PDF) Ferroelectricity in Hafnium Oxide Thin Films

PDF | We report that crystalline phases with ferroelectric behavior can be formed in thin films of SiO2 doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol. % of SiO2

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Pyroelectricity of silicon-doped hafnium oxide thin films

Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found.

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Exploring New Metal Electrodes for Ferroelectric Aluminum

Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide Abstract: In this paper, we explore new metal electrodes for ferroelectric capacitors based on Al-doped HfO 2. We find that Ti/Pd, Ti/Au, and W top electrodes can induce much higher remanent polarization as compared to the traditional TiN top electrode. The endurance

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Ferroelectricity in Doped Hafnium Oxide ResearchGate

PDF | Recently, the ferroelectric behavior of doped hafnium oxide deposited by different deposition techniques like ALD and PVD was reported. A certain dopant content in HfO2 causes a non

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Doped Hafnium Oxide – An Enabler for Ferroelectric Field

T. Mikolajick et al., "Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors", Advances in Science and Technology, Vol. 95, pp. 136-145, 2014

More
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Pyroelectricity of silicon-doped hafnium oxide thin films

Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found.

More
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US6858159B2 Titanium-doped hafnium oxide scintillator

Hafnium oxide HfO 2 scintillator compositions are doped with titanium oxide and at least an oxide of a metal selected from the group consisting of Be, Mg, and Li. The scintillator compositions can include sintering aid material such as scandium and/or tin and a rare earth metal and/or boron for improved transparency. The scintillators are characterized by high light output, reduced afterglow

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Ferroelectric Aluminum-Doped Hafnium Oxide for Memory

Jun 27, 2018· In the last few years, doped metal oxides, including hafnium oxide (Hf0 2) and zirconium oxide (ZrO 2), were found to have ferroelectric phase [1]–[2]. Ferroelectric HfO 2 has the advantages of a high coercive field, excellent scalability (down to 2.5nm), and

More
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Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

13 Wui Chung Yap, Hao Jiang, Jialun Liu, Qiangfei Xia, Wenjuan Zhu, Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide, Applied Physics Letters, 2017, 111, 1, 013103CrossRef

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Silicon doped hafnium oxide (HSO) and hafnium zirconium

Here, we report more insight into FeFET performance by integrating two types of ferroelectric (FE) materials and varying their properties. By varying the material type [HfO2 (HSO) versus hafnium zirconium oxide (HZO)], optimum content (Si doping/mixture ratio), and film thickness, a material relation to FeFET device physics is concluded.

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Pyroelectric and electrocaloric effects in ferroelectric

Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO{sub 2} film under bipolar pulsed-field operation.

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Neutron Detection Utilizing Gadolinium Dope Hafnium Oxide

Neutron Detection Utilizing Gadolinium Doped Hafnium Oxide Films . 1. Introduction . The contents of this thesis include the results of a series of experiments involving gadolinium (Gd) doped hafnium oxide (HfO2) films. These experiments were intended to determine the properties of the films and to determine if this material could be used to

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Hafnium dioxide Wikipedia

Hafnium(IV) oxide is the inorganic compound with the formula Hf O 2.Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium.It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium

More
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APS -APS March Meeting 2018 Event Ferroelectric

In the last few years, doped metal oxides, including hafnium oxide (HfO 2) and zirconium oxide (ZrO 2), were found to possess a ferroelectric phase. As compared to traditional ferroelectric perovskites, ferroelectric HfO 2 has the advantages of a high coercive field, excellent scalability, and good compatibility with CMOS processing.

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XPS Interpretation of Hafnium

If analyzing nitrided hafnium oxide or silicate, collect entire Hf4p region (up to 490eV), making sure both Hf4p 3/2 and Hf4p 1/2 components are acquired. This will give the best opportunity to deconvolve the true N1s signal from the overlapping plasmon loss feature of the Hf4p 1/2 peak. Interpretation of XPS spectra

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(PDF) Impact of layer thickness on the ferroelectric

This group includes [17–19], the growth of ultra-thin films [20] or crystallization in the pres- hafnium oxide based materials doped with trivalent or tetravalent ence of capping layers [21]. The ionic radius of the impurities deter- mines whether the tetragonal or the cubic phase is stable [17].

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Pyroelectric and electrocaloric effects in ferroelectric

Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO{sub 2} film under bipolar pulsed-field operation.

More
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Hafnium Oxide | AMERICAN ELEMENTS

Hafnium Oxide is a highly insoluble thermally stable Hafnium source suitable for glass, optic and ceramic applications. Hafnium oxide is an inert, off-white powder also known as hafnia with a high melting point, it is among the most common and stable hafnium compounds. Hafnium Oxide is generally immediately available in most volumes.

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Doped Hafnium Oxide – An Enabler for Ferroelectric Field

T. Mikolajick et al., "Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors", Advances in Science and Technology, Vol. 95, pp. 136-145, 2014

More
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Ferroelectric Aluminum-Doped Hafnium Oxide for Memory

Jun 27, 2018· In the last few years, doped metal oxides, including hafnium oxide (Hf0 2) and zirconium oxide (ZrO 2), were found to have ferroelectric phase [1]–[2]. Ferroelectric HfO 2 has the advantages of a high coercive field, excellent scalability (down to 2.5nm), and

More
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High-density energy storage in Si-doped hafnium oxide thin

Capacitors based on 10 nm antiferroelectric silicon-doped hafnium oxide (Si:HfO2) thin films are investigated in terms of energy storage efficiency, cycling endurance, and reliability. Atomic layer deposition (ALD) on an area-enhanced substrate with large-scale arrays of deep-trench structures is used to significantly increase the energy density, yielding a value of 450 μJ/cm2 and an energy

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Nanocrystalline Silicon Embedded Zirconium-Doped Hafnium

Nanocrystalline Silicon Embedded Zirconium-Doped Hafnium Oxide High-k Memory DeviceJiang LU, Yue KUO, Jiong YAN and Chen-Han LIN Thin Film Nano and Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.

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Zirconium dioxide Wikipedia

Zirconium dioxide (ZrO 2), sometimes known as zirconia (not to be confused with zircon), is a white crystalline oxide of zirconium.Its most naturally occurring form, with a monoclinic crystalline structure, is the mineral baddeleyite.A dopant stabilized cubic structured zirconia, cubic zirconia, is synthesized in various colours for use as a gemstone and a diamond simulant

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The demonstration of significant ferroelectricity in

Schenk, T. et al. Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories. Solid-State Device Res. Conf. (ESSDERC), 2013 Proc. Eur. 260–263 (2013).

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Hafnium dioxide Wikipedia

Hafnium(IV) oxide is the inorganic compound with the formula Hf O 2.Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium.It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium

More
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Chemists created nanoparticles for safe imaging of tumors

Mar 21, 2017· Chemists from Russia and Switzerland created biosafe luminescent nanoparticles for imaging tumors and blood vessels damaged by heart attack or stroke. The particles are made of hafnium oxide

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Hafnium Oxide Based Ferroelectric Materials — NaMLab

Hafnium Oxide Based Ferroelectric Materials Fig. 1: Remanent polarization values for ~10 nm thick Si, Al, Gd, and La doped HfO 2 films with different dopant content. During the last two years the main focus in the project was on a detailed understanding of the ferroelectric properties in thin doped HfO 2 layers.

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The flexoelectric effect in Al-doped hafnium oxide

Here we show the flexoelectric effect in Al-doped hafnium oxide, using the tip of an atomic force microscope (AFM) to maximize the strain gradient at the nanometre scale. Our analysis indicates that pure mechanical force can be used for the local polarization control of sub-100 nm domains.

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Elastic Properties of Monoclinic Hafnium Oxide at Room

The Young's and shear moduli of polycrystalline monoclinic hafnium oxide were determined by the sonic resonance method at room temperature as a function of volume fraction porosity. The Spriggs equation empirically described the data and the zero porosity moduli as 283.6 GN/m 2 and 109.2 GN/m 2 for Young's and shear moduli, respectively. The

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Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric

Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now.

More

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